Growth chemistry and electrical performance of ultrathin alumina formed by area selective vapor phase infiltration

Growth of Pyrocarbon by Multi-Physics Fields Chemical Vapor Infiltration

A novel rapid chemical vapor infiltration (CVI) processing defined by multi-physics fields CVI was used to fabricate carbon/carbon (C/C) composites. Liquid petrol gas is used as carbon source and the parameters were experimental tested and optimized. The influence of temperature and pressure on the growth of pyrocarbon was investigated in detail. Because of the influence of multi-physics fields...

Photoluminescence Mechanism and Photocatalytic Activity of Organic-Inorganic Hybrid Materials Formed by Sequential Vapor Infiltration.

Organic-inorganic hybrid materials formed by sequential vapor infiltration (SVI) of trimethylaluminum into polyester fibers are demonstrated, and the photoluminescence of the fibers is evaluated using a combined UV-vis and photoluminescence excitation (PLE) spectroscopy approach. The optical activity of the modified fibers depends on infiltration thermal processing conditions and is attributed ...

Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy

Towards large area and continuous MoS2 atomic layers via vapor-phase growth: thermal vapor sulfurization.

We report on the effects of substrate, starting material, and temperature on the growth of MoS(2) atomic layers by thermal vapor sulfurization in a tube-furnace system. With Mo as the starting material, atomic layers of MoS(2) flakes are obtained on sapphire substrates while a bell-shaped MoS(2) layer, sandwiched by amorphous SiO(2), is obtained on native-SiO(2)/Si substrates under the same sul...

Numerical simulation of liquid phase electro-epitaxial selective area growth

A computational model for semiconductor crystal growth on a partially masked substrate under simplified liquid phase electroepitaxy conditions is developed. The model assumes isothermal diffusional growth, which is enhanced by applied DC current through crystal-solution interface. A finite-difference, front-tracking method is used to numerically evolve the interface. Computed examples show stro...